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Study of band structure renormalization of tight-binding model semiconductor by incorporating GW self-energy – ABSTRACT
By: A. R. Hayyu, A. Azhar, and M. A. Majidi Link to publication: https://aip.scitation.org/doi/10.1063/1.5064050 Almost in all first-principles or modeling calculations of semiconductors that do not take into account electron-electron (e-e) interactions the resulting band gap is too much underestimated as compared to experimental data. Most conventional semiconductors, such as Ge, Si, or GaAs, may […]
